Royal Philips Electronics today introduced QUBiC4X, the latest addition to its highly successful QUBiC4 family of high-performance BiCMOS (Bipolar CMOS) process technologies. Based on ...
NXP has underpinned its leadership in radio frequency with highly advanced QUBIC4 BiCMOS silicon technology, delivering higher levels of integration and performance at high frequencies, all in a cost ...
In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology ...
Jazz Offers Cost-Effective 0.13-micron SiGe BiCMOS Process Platform with 200GHz Transistors for Highest Performance System-on-Chip (SoC) Applications NEWPORT BEACH, Calif., April 11, 2007 -- Jazz ...
MIGDAL HAEMEK, Israel & NEWPORT BEACH, Calif., May 10, 2010 (BUSINESS WIRE) -- TowerJazz, the global specialty foundry leader, today announced design kit availability for its next-generation 130nm ...
Selecting a silicon technology that deviates from today's mainstream CMOS foundry road maps may appear, at first glance, to be a risky proposition. While conventional wisdom states that standard CMOS ...
Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s ...
Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing ...
The monolithic integration of RF-MEMS with SiGe-BiCMOS technology opens the door to the creation of low-cost, highly integrated circuits. From there, the technology can power radar and imaging ...
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