Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of ...

Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to achieve both low on-resistance and high reliability. The company reports that the design reduces ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...