A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...
RF Micro Devices (News - Alert) announced that the company has qualified its GaN1 power semiconductor process technology for 65V operation. For emerging defense and commercial applications, amplifier ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the nanoscale ...
onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...
TORRANCE, Calif. and HYDERABAD, India, Dec. 8, 2025 /PRNewswire/ -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ ...
Thermal treating of metallic magneiusm on gallium nitride semiconductor results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, gallium atoms are shown in orange, blue, ...
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