Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

The first Schottky barrier rectifiers based on Trench MOS technology can be used in rectification circuits or as OR-ing diodes in redundant switchmode power supplies.

Here Schottky diodes based on amorphous indium–gallium–zinc–oxide (IGZO) are fabricated on flexible plastic substrates.

Vishay Intertechnology, Inc. announced the industry's smallest 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK (R) SC-75 package, the ...

Traditionally, the Schottky diode equation is often used for characterization of I-V curve of metal/semiconductor contact. Thus researchers in the device community still blindly employ this “old” ...

Toshiba develops SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to realize both low on-resistance and high reliability.

The Power Schottky Diode market was estimated to be worth roughly USD Billion in 2021 and is expected to reach USD Billion by 2028; based on primary research.

Infineon has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.

Spanning 12 devices, the 103 series Schottky diodes feature a low forward-voltage drop and a very high surge-current rating. They are offered in a range of breakdown voltages- ...