Rohm will integrate its own development and manufacturing technologies for GaN power devices with the process technology of ...
Samco has announced that its plasma etching system, the RIE-400iP, has been selected by the Technical University of Denmark ...
IFW Dresden is developing innovative chemistries for a variety of new semiconductor device categories. Selecting the Agnitron ...
The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...
The UK Semiconductor Industry Future Skills (UK-SIFS) CDT will be led by Swansea University’s Centre for Integrative ...
Efficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board engineered ...
Toptica Photonics is a commercial member of the US Department of War’s (previously DoD) NORDTECH Hub. BluGlass is supporting ...
The report says that despite short-term pricing pressure in certain segments, electrification, AI infrastructure expansion, and next-generation connectivity are reinforcing long-term demand for ...
“The big thing with lasers is that they start having thermal issues at relatively low temperatures,” Chao said. “MicroLEDs ...
Marktech Optoelectronics, a US maker of UV LED and ultraviolet LED emitter technologies, has announced an expanded portfolio of high-power UV LED light sources with new UV emitters spanning 230nm to ...
The report says that despite short-term pricing pressure in certain segments, electrification, AI infrastructure expansion, ...
A team from China has strengthened the case for manufacturing GaN HEMTs by plasma-assisted MBE by producing simple devices that can block more than 2.5 kV. While MOCVD dominates the manufacture of GaN ...
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