Abstract: The characteristics and stability of bottom-gate (BG), indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) with different types of silicon oxide (SiOx) passivation (PV) layers have ...
Abstract: A metasurface with thermal tunability using Indium Antimonide (InSb) is proposed, showing dual functionalities of absorption and polarization conversion. In its metallic state at a ...
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